Method of manufacturing a semiconductor device with a silicon-germanium gate electrode

ABSTRACT

A SiO 2  film serving as a gate dielectric film is formed on a silicon substrate. A seed Si film is formed on the gate dielectric film. A thin SiGe film of a thickness of 50 nm or less is formed on the seed Si film at a temperature between 450° C. and 494° C., and a thin cap Si film of a thickness of 0.5 nm to 5 nm is continuously formed on the thin SiGe film at the same temperature.

This is a divisional of application Ser. No. 10/840,258 filed on May 7,2004, now abandon.

FIELD OF THE INVENTION

The present invention relates to a semiconductor device and to a methodfor manufacturing thereof. More specifically the present inventionrelates to a gate electrode including a thin SiGe film and to a methodfor manufacturing thereof.

DESCRIPTION OF THE BACKGROUND ART

In recent years, MOSFET. (metal oxide semiconductor field effecttransistor) as a semiconductor device has been extremely miniaturizedand highly integrated. Concurrent-to this trend, the thickness of a gatedielectric film has been reduced from the point of view of securing thedriving current and saving power consumption. However, the value ofparasitic capacitance resulted from the depletion generated in a gateelectrode composed of polysilicon due to the reduction of the thicknessof gate dielectric films has not been able to ignored, thereby arisingproblems in the highly integration and power saving of MOSFETs.

In order to cope with such problems, the use of silicon germanium(hereafter abbreviated to “SiGe”) for a gate electrode has beenproposed. The use of a SiGe film in, the gate electrode of an MOSFET canimprove the activation rate of conductive impurities (e.g., boron) inthe gate electrode, inhibit the depletion of the gate electrode, thusreducing the parastic capacitance. This allows the use of a gatedielectric film with an increased thickness and the reduction of gateleakage current.

Although the width of the gate electrode (hereafter referred to as “gatelength”) must be reduced with the above-described miniaturization of theMOSFET, the thickness of the gate electrode must also be reduced fromthe point of view of the stability and the processing accuracy of gatewiring patterns. For example, according to the ITRS Roadmap of 2001Edition, the thickness of agate electrode must be reduced to 35 nm to 70nm in a semiconductor device of the 35-nm-gate-length generation.

In order to lower the resistance of a gate electrode, a silicide filmmay be formed above the SiGe film. In this case, there is a problem ofthe occurrence of silicide cohesion and defective resistance caused byGe in the SiGe film during the formation of the cobalt silicide film. Inorder to solve this problem, there has been proposed to form a thick capSi film on the SiGe film, and to adjust the Ge concentration in thesurface of the cap Si film to 2% of less (e.g., refer to Japanese PatentLaid-Open No. 2002-261274 (Page 5, FIG. 1)).

In next-generation semiconductor devices, as described above, thethickness reduction of the SiGe film as the gate electrode is demanded.Furthermore, when a cap Si film is formed on the SiGe film to form asilicide film, since the thickness of the SiGe film must be the value ofthe entire thickness of the gate electrode minus the thickness of thesilicon film, the SiGe film must further be thinned.

However, the own examinations by the present inventor revealed theoccurrence of problems described below when the SiGe film is thinned.

FIGS. 13A to 13C are SEM photographs showing the cross section of thethinned SiGe film grown on a gate dielectric film composed of a SiO₂film. Specifically, FIG. 13A shows the case where the SiGe film of athickness of 150 nm is formed, FIG. 13B shows the case where the SiGefilm of a thickness of 50 nm is formed, and FIG. 13C shows the casewhere the SiGe film of a thickness of 20 nm is formed.

As FIG. 13A shows, when the SiGe film is relatively thick (150 nm), thecontinuous film free of voids is attained. However, as FIG. 13B shows,when the growth time is shortened to make the thickness of the SiGe film50 nm, voids (refer to circled portions in FIG. 13B) generate in theSiGe film. When the growth time is further shortened to make thethickness of the SiGe film 20 nm, the film becomes discontinuous due tosurface roughness as FIG. 13C shows.

When the SiGe film is thinned, as described above, there are problemsthat voids generate in the SiGe film during growing the grains of theSiGe film, or the SiGe film becomes discontinuous due to surfaceroughness of the SiGe film, that is, a defective SiGe film is produced.There are also problems that the conformation of the SiGe film variesdue to heat treatment performed after the formation of the SiGe film,thus forming of a defective SiGe film.

If the above-described defective film is formed due to the thinning ofthe SiGe film, it is difficult to form the SiGe film having a uniform Gecontent in the boundary between the gate dielectric film and the gateelectrode. In addition, when a gate electrode is formed using dryetching, locally defective processing caused by the non-uniformity ofthe thickness of the SiGe film. Since the voids generated in the SiGefilm causes variation in the wiring resistance of the gate wirings andthe driving ability of the transistor, the yield of transistormanufacturing is affected.

SUMMARY OF THE INVENTION

The present invention has been conceived to solve thepreviously-mentioned problems and a general object of the presentinvention is to provide novel and useful method for manufacturing asemiconductor device.

A more specific object of the present invention is to form ahigh-quality thin-SiGe film free of voids on a gate dielectric film.

The above object of the present invention is attained by a followingsemiconductor device and a following method for manufacturing asemiconductor device.

According to first aspect of the present invention, the semiconductordevice comprises a gate dielectric film formed on a substrate and a gateelectrode formed on the gate dielectric film. The gate electrodeincludes a seed Si film formed on the gate dielectric film; a thin SiGefilm formed on the seed Si film and having a thickness of 50 nm or less;and a thin cap Si film formed on the thin SiGe film and having athickness of 0.5 nm to 5 nm.

According to second aspect of the present invention, in the method, agate dielectric film is first formed on a substrate. A seed Si film isformed on the gate dielectric film. A thin SiGe film on the seed Si filmat a temperature between 450° C. and 494° C., and a thin cap Si film iscontinuously formed with a thickness of 0.5 nm to 5 nm on the thin SiGefilm at the same temperature. The thin cap Si film, the thin SiGe film,and the seed Si film is patterned to form a gate electrode. Source-drainregions are formed in an upper layer of the substrate through ionimplantation using the gate electrode as a mask.

According to third aspect of the present invention, in the method, agate dielectric film is first formed on a substrate. A seed Si film isformed on the gate dielectric film. A thin SiGe film is formed on theseed Si film at a temperature between 450° C. and 494° C., and a thincap Si film is continuously formed with a thickness of 0.5 nm to 5 nm onthe thin SiGe film at the same temperature. An upper Si film is formedon the thin cap Si film at a temperature higher than a temperature offorming the thin SiGe film. The upper Si film, the thin cap Si film, thethin SiGe film, and the seed Si film are patterned to form a gateelectrode. Source-drain regions are formed in an upper layer of thesubstrate through ion implantation using the gate electrode as a mask.

Other objects and further features of the present invention will beapparent from the following detailed description when read inconjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic cross-sectional view for illustrating asemiconductor device according to a first embodiment of the presentinvention;

FIGS. 2A to 2D are process sectional views for illustrating a method formanufacturing the semiconductor device shown in FIG. 1;

FIGS. 3A and 3B are graphs showing the relationship between the Gecontent in a thin SiGe film and the depletion rate in an MOS capacitor;

FIG. 4 is a graph showing the relationship between the growthtemperature of a thin SiGe film, and the growth rate and the uniformityof the film thickness on the surface of the thin SiGe film;

FIGS. 5A to 5C are SEM photographs showing the cross sections of a thinSiGe film when the growth pressure of the thin SiGe film was varied

FIGS. 6A and 6B are SEM photographs showing the cross sections of a thinSiGe film as formed and after forming a thin cap Si film thereon;

FIG. 7 is a schematic cross-sectional view for illustrating asemiconductor device according to a second embodiment of the presentinvention;

FIG. 8 is a process sectional view for illustrating a method formanufacturing the semiconductor device according to a second embodimentof the present invention;

FIGS. 9A and 9B are SEM photographs showing the cross sections of thethin SiGe film after heat treatment corresponding to the growth of theupper Si film in the case when a thin cap Si film is formed and notformed on the thin SiGe film;

FIGS. 10A and 10B are SEM photographs showing the cross sections of athin SiGe film when the growth temperature of the upper Si film ischanged in the formation of the upper Si film on the thin SiGe filmthrough the thin cap Si film;

FIG. 11 is a schematic cross-sectional view for illustrating asemiconductor device according to a third embodiment of the presentinvention;

FIGS. 12A and 12B are process sectional views for illustrating a methodfor manufacturing the semiconductor device according to a thirdembodiment of the present invention;

FIG. 13 is a schematic cross-sectional view for illustrating asemiconductor device according to a fourth embodiment of the presentinvention;

FIGS. 14A and 14B are process sectional views for illustrating a methodfor manufacturing the semiconductor device according to a fourthembodiment of the present invention;

FIG. 15 is a schematic cross-sectional view for illustrating asemiconductor device according to a fifth embodiment of the presentinvention;

FIGS. 16A and 16B are process sectional views for illustrating a methodfor manufacturing the semiconductor device according to a fifthembodiment of the present invention;

FIG. 17 is a schematic cross-sectional view for illustrating asemiconductor device according to a sixth embodiment of the presentinvention;

FIG. 18 is a schematic cross-sectional view for illustrating asemiconductor device according to a seventh embodiment of the presentinvention;

FIGS. 19A to 19C are SEM photographs showing the cross section of thethinned SiGe film grown on a gate dielectric film composed of a SiO₂film.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

In the following, principles and embodiments of the present inventionwill be described with reference to the accompanying drawings. Themembers and steps that are common to some of the drawings are given thesame reference numerals and redundant descriptions therefore may beomitted.

First Embodiment

First, the structure of a semiconductor device according to a firstembodiment of the present invention will be described.

FIG. 1 is a schematic cross-sectional view for illustrating asemiconductor device according to a first embodiment of the presentinvention.

As FIG. 1 shows, a silicon substrate serving as the substrate 2 haselement regions on which semiconductor elements such as transistors areformed, and isolation regions for isolating the element regions, inwhich field insulating films (also referred to as “element-isolatinginsulating films”) 4 are formed. Well regions (not shown) are formed inthe element regions of the substrate 2.

On the substrate 2 in the element regions, a gate dielectric film 6 isformed. As the gate dielectric film 6, for example, a SiO₂ film, a Si₃N₄film, or a SiON film (hereafter collectively referred to as “SiO₂ filmor the like”) can be used. The thickness of the gate dielectric film 6composed of a SiO₂ film or the like is, for example, 1.0 nm to 1.5 nm.In place of the SiO₂ film or the like, a high-dielectric-constant film(high-k dielectric film) can be used as the gate dielectric film 6. Alaminated film composed of a SiO₂ film or the like and ahigh-dielectric-constant film can also be used as the gate dielectricfilm 6. In this case, the thickness of the SiO₂ film or the like is lessthan 1.0 nm. Here, as the high-dielectric-constant film, for example, ametal oxide such as Al₂O₃, HfO₂, ZrO₂, and La₂O₃, a metal nitride, ametal oxynitride, a metal silicate such as HfSiO_(x) and ZrSiO_(x), or ametal aluminate such as HfAlO_(x) and ZrAlO_(x), can be used.

On the gate dielectric film 6 is formed a gate electrode composed of thelaminate of a seed Si film 8, a thin SiGe film 10, and a thin cap Sifilm 12. Source-drain regions 14 sandwiching a channel region (notshown) underneath the gate electrode are formed in the upper layer ofthe silicon substrate 2.

Next, the gate electrode will be described.

On the gate dielectric film 6 is formed an amorphous Si film serving asthe seed Si film 8. The thickness of the seed Si film 8 is preferably 1nm to 5 nm.

On the seed Si film 8 is formed a thin SiGe film 10 as a lower electrodefilm. The thickness of the thin SiGe film 10 is preferably 50 nm orbelow. The thin SiGe film 10 is represented by a composition formula ofSi_((1−x))Ge_(x), and the Ge content X is preferably 0.15 or more andsmaller than 0.4 (15% or more and smaller than 40%), and more preferablyabout 0.3 (30%) (described later). The thin SiGe film 10 is preferablygrown at a growth temperature of 450° C. or above and below 494° C.(described later). The thin SiGe film 10 is also preferably apolycrystalline thin SiGe film grown under a growth pressure of 30 Pa oramorphous SiGe grown under a growth pressure 150 Pa or above (describedlater).

On the thin SiGe film 10 is formed a thin cap Si film 12. The thicknessof the thin cap Si film 12 is preferably 0.5 nm to 5 nm (describedlater). It is preferable that the thin SiGe film 10 and the thin cap Sifilm 12 are continuously formed using the same apparatus at the sametemperature.

Next, a method for manufacturing the above-described semiconductordevice will be described.

FIGS. 2A to 2D are process sectional views for illustrating a method formanufacturing the semiconductor device shown in FIG. 1.

First, as FIG. 2A shows, field insulating films 4 are formed in theisolation regions of a silicon substrate 2 using STI (shallow trenchisolation) method. Then, the ions of a conductive impurity are implantedinto the element regions (not shown) of the silicon substrate 2, andannealing is performed to form well regions.

Next, after a predetermined pretreatment (e.g., the removal of naturaloxide films) has been performed, a SiO₂ film or the like (describedabove) with a thickness of, for example, 1.0 nm to 1.5 nm is formed as agate dielectric film 6 on the silicon substrate 2 using a method such asthermal oxidation (or thermal nitriding or thermal oxynitriding) orplasma oxidation (or plasma nitriding or plasma oxynitriding).

As described above, a high-k dielectric film can be formed as the gatedielectric film 6 in place of the SiO₂ film or the like, or togetherwith the SiO₂ film or the like. When a laminated structure composed of aSiO₂ film or the like and a high-k dielectric film is used, thethickness of the SiO₂ film or the like is less than 1.0 nm. The high-kdielectric film can be grown using an ALD (atomic layer deposition)method or an MOCVD (metal organic chemical vapor deposition) method.

Next, as FIG. 2A shows, an amorphous Si film as a seed Si film 8 with athickness of, for example, 1 nm to 5 nm is formed on the gate dielectricfilm 6 using a CVD (chemical vapor deposition) method. For the formationof the seed Si film 8, for example, a batch-type vertical LPCVDapparatus can be used. The conditions for forming the seed Si film 8 inthe LPCVD apparatus are, for example, an SiH₄ flow rate of 1 slm, agrowth temperature of 475° C., and a growth time of 5 to 20 minutes.

Then, as FIG. 2B shows, a thin SiGe film 10 is formed on the seed Sifilm 8 using the above-described LPCVD apparatus. Specifically, the seedSi film 8 and the thin SiGe film 10 are continuously formed.

Here, the Ge content X in the thin SiGe film 10 represented by thecomposition formula, Si_((1−x))Ge_(x), is preferably 0.15 or more andsmaller than 0.4 (15% or more and smaller than 40%), and most preferably0.3 (30%). The own examinations by the present inventor on the Gecontent will be described below. The present inventor examined therelationship between the Ge content in a thin SiGe film formed on a gatedielectric film through a seed Si film and the depletion rate in an MOScapacitor.

FIGS. 3A and 3B are graphs showing the relationship between the Gecontent in a thin SiGe film and the depletion rate in an MOS capacitor.In other words, FIGS. 3A and 3B are graphs showing the Ge-contentdependency of the depletion rate in an MOS capacitor. Specifically, FIG.3A is a graph showing the Ge-content dependency of the depletion rate ina PMOS capacitor; and FIG. 3B is a graph showing the Ge-contentdependency of the depletion rate in an NMOS capacitor. Here, thedepletion rate means the percentage of the inverted capacitance to theaccumulated capacitance in an MOS capacitor.

As FIG. 3A shows, the depletion rate on a PMOS capacitor is improvedwith increase in the Ge content, and although the improving effect isnot satisfactory when the Ge content is less than 0.15 (15%), theimproving effect is saturated when the Ge content is 0.3 (30%) or more.This shows that increase in the Ge content to 0.15 (15%) or moreimproves the depletion rate of the PMOS capacitor, and improve thedriving ability of the PMOS transistor. On the other hand, as FIG. 3Bshows, although the depletion rate of an NMOS capacitor little changeswhen the Ge content is 0.3 (30%) or less, the depletion rate is loweredwhen the Ge content is 0.4 (40%), and the driving ability of the NMOStransistor is lowered.

Therefore, in order to make the improvement of gate depletion anddriving ability of a PMOS transistor compatible to the avoidance oflowered driving ability of an NMOS transistor, the Ge content in thethin SiGe film 10 is preferably 0.15 or more and smaller than 0.4 (15%or more and smaller than 40%), and most preferably 0.3 (30%) asdescribed above.

The growth temperature of the thin SiGe film 10 is preferably 450° C. orabove and 494° C. or below, and most preferably 475° C. The ownexaminations by the present inventor on the growth temperature will bedescribed below. The present inventor examined the relationship betweenthe growth temperature of a thin SiGe film formed on a gate dielectricfilm composed of a SiO₂ film through a seed Si film, and the growth rateand the uniformity of the film thickness on the surface of the thin SiGefilm.

FIG. 4 is a graph showing the relationship between the growthtemperature of a thin SiGe film, and the growth rate and the uniformityof the film thickness on the surface of the thin SiGe film. Here, theuniformity of the film thickness on the surface means the variation σ(%) of the thickness of the thin SiGe film measured at 49 points on thesurface. The thin SiGe film having a Ge content of 0.3 (30%) was grownunder a flow-rate ratio of H₂-diluted 10% GeH₄ to SiH₄ of 0.96.

As FIG. 4 shows, although the growth rate increases with the elevationof the growth temperature, the uniformity of the film thickness on thesurface of the thin SiGe film (film thickness variation a) worsens. Whenthe growth temperature is 525° C. or above, the value of film thicknessvariation σ increases to larger than 2%, and the uniformity of the filmthickness on the surface worsens. If the growth temperature is evenhigher, the value of the surface roughness of the thin SiGe filmincreases, and the consequent etching process of the gate electrode willbecome difficult. In order to make the value of film thickness variationσ 1%, that is, in order to achieve a favorable uniformity of the filmthickness on the surface, the growth temperature is preferably 494° C.or below, and more preferably 475° C. Although not shown in the graph,the growth temperature of below 450° C. is not preferable from the pointof view of productivity, because the growth rate of the thin SiGe filmis lowered, and therefore the throughput is lowered.

Therefore, in order to achieve a favorable uniformity of the filmthickness on the surface of the thin SiGe film 10, the growthtemperature of the thin SiGe film 10 is preferably 450° C. or above and494° C. or below, and most preferably 475° C.

The quality of the thin SiGe film 10 varies depending on the growthpressure. The growth pressure of the thin SiGe film 10 is preferablybelow 30 Pa, or 150 Pa or above, and more preferably 10 Pa. The owninvestigation by the present inventor will be described below. Thepresent inventor investigated the conformation of the thin SiGe film byvarying the growth pressure of the thin SiGe film formed on a gatedielectric film composed of a SiO₂ film through a seed Si film.

FIGS. 5A to 5C are SEM photographs showing the cross sections of a thinSiGe film when the growth pressure of the thin SiGe film was varied.Specifically, FIGS. 5A, 5B, and 5C are SEM photographs showing filmmorphology of thin SiGe film when the growth pressure of the thin SiGefilm was 30 Pa, 20 Pa, and 200 Pa, respectively.

As FIG. 5A shows, when the thin SiGe film was formed under a pressure of30 Pa, voids (in the circled portions) were formed in the thin SiGefilm. On the other hand, as FIG. 5B shows, when the thin SiGe film wasformed under a pressure of 20 Pa, the number of voids (in the circledportions) decreased significantly, and the film quality was improved.This is because the film deposition rate is low when the thin SiGe filmis grown under a pressure lower than 30 Pa, impurities such as hydrogenare released during the deposition of the film, and a polycrystallinethin SiGe film having a low impurity content and a lowamorphous-component content can be formed. Thereby, a void-freepolycrystalline thin SiGe film of small volume change due to change intemperature that excels in thermal stability can be obtained.

As FIG. 5C shows, when the thin SiGe film was formed under a pressure of200 Pa, no voids were formed in the thin SiGe film, and the surfaceroughness was significantly improved. This is because the filmdeposition rate is high when the thin SiGe film is grown under apressure of 200 Pa or above, and the deposition of film is quicker thanthe crystalline growth of the film. The results of X-ray diffractionanalysis showed that the thin SiGe film was amorphous. Thereby, avoid-free amorphous thin SiGe film that excels in surface flatness canbe obtained.

Therefore, in order to achieve favorable thermal stability and surfaceflatness, the growth pressure of the thin SiGe film 10 is preferablybelow 30 Pa, or 150 Pa or above, and more preferably 10 Pa.

Next, as FIG. 2B shows, a thin cap Si film 12 is formed on the thin SiGefilm 10 using the above-described LPCVD apparatus. Specifically, thethin SiGe film 10 and the thin cap Si film 12 are continuously formed atthe same temperature. Here, the present inventor examined the effect offorming the thin cap Si film 12 on the thin SiGe film 10.

FIGS. 6A and 6B are SEM photographs showing the cross sections of a thinSiGe film as formed and after forming a thin cap Si film thereon. Here,the Ge content in the thin SiGe film is 0.3 (30%), the growthtemperature is 475° C., the growth pressure is 10 Pa, and the thicknessof the grown film is 50 nm. The growth temperature of the thin cap Sifilm is 475° C., the same as the growth temperature of the thin SiGefilm, the flow rate of SiH₄ is 1 slm, and the thickness of the grownfilm is 5 nm. The present inventor confirmed the growth rate of the thincap Si film is 0.25 nm/min at the above-described growth condition.Therefore, the cap Si film cannot be thickened, i.e. the thick cap Sifilm cannot be applied to the mass production, since throughput islowered. When the growth temperature is raised for improving thethroughput, there are problems that voids generate in the thin SiGe filmand the surface of the SiGe film is roughened.

As FIG. 6A shows, when the thin cap Si film is not formed, that is,immediately after forming the thin SiGe film 10, there are voids in thethin SiGe film 10 (in the circled portions). As FIG. 6B shows, byforming the thin cap Si film 12, voids in the thin SiGe film 10disappear, and a high-quality thin SiGe film can be obtained. The reasonwhy voids disappear is that the formation of the thin cap Si film 12lowers the surface energy compared with the case when the thin SiGe film10 is exposed on the surface, and thermally stabilizes the thin SiGefilm 10.

Therefore, by continuously growing the thin cap Si film 12 after growingthe thin SiGe film 10 on the gate dielectric film 6 through the seed Sifilm 8, a high-quality void-free thin SiGe film can be obtained. Thethermal stability of the configuration of the thin SiGe film 10 is alsoimproved. Thus, avoid-free thin SiGe film that excels in surfaceflatness can be obtained.

The present inventor confirmed the problems of increase in surfaceroughness of the thin SiGe film and the formation of voids in the filmwhen the thin-SiGe film 10 and the thin cap Si film 12 are notcontinuously formed, or not formed at the same temperature, that is, thetemperature is changed. Increase in surface roughness causes increase innon-uniformity of impurity introduction in the consequent process, orincrease in non-uniformity of gate processing. The formation of voidsdeteriorates electrical properties due to the acceleration of thereduction and decomposition of the gate dielectric film even if thevoids are minute. However, as described above, the occurrence of suchproblems can be prevented by continuously forming the thin SiGe film 10and the thin cap Si film 12 at the same temperature.

Next, as FIG. 2C shows, the thin cap Si film 12, the thin SiGe film 10,the seed Si film 8, and the gate dielectric film 6 are sequentiallypatterned using lithography technique and etching technique well knownin the art. Thereby, the gate electrode of the MOSFET is formed.

Finally, as FIG. 2D shows, conductive impurity ions are implanted usingthe gate electrode as the mask to form the source-drain region 14 on theupper layer of the silicon substrate 2.

In the first embodiment, as described above, the thin SiGe film 10 isformed on the gate dielectric film 6 through the seed Si film 8 at lowgrowth temperature (450° C. or above and 494° C. or below), and a thincap Si film 12 of a thickness of 0.5 nm to 5 nm is formed thereon at thesame growth temperature. By forming the thin cap Si film 12, a void-freehigh-quality thin SiGe film 10 can be formed on the gate dielectric film6. Thus, the thin SiGe film 10 that excels in the uniformity of filmthickness can be formed in the boundary between the gate dielectric film6 and the gate electrode, and a uniform Ge content in the boundary canbe achieved. Therefore, the thickness of the thin SiGe film 10 can bereduced, and high-performance transistors can be manufactured in highreproducibility. Further a high quality thin SiGe film can be attainedwith restraint of deterioration of throughput, since the thickness ofthe thin cap Si film 12 is within the range of 0.5 nm to 5 nm.

In addition, as described above, since the thin SiGe film 10 is a thinfilm having a favorable film-thickness uniformity, local defectiveprocessing such as the dent of the silicon substrate 2 caused by voidsin the thin SiGe film during dry etching for forming the gate electrodecan be avoided. Thereby, the process margin in the gate processing canbe enlarged, and high-performance transistors can be stablymanufactured.

Second Embodiment

First, the structure of a semiconductor device according to a secondembodiment of the present invention will be described.

FIG. 7 is a schematic cross-sectional view for illustrating asemiconductor device according to a second embodiment of the presentinvention.

The semiconductor device according to the second embodiment shown inFIG. 7 differs from the above-described semiconductor device accordingto the first embodiment in that an upper Si film 16 is further formed onthe thin cap Si film 12.

Specifically, as FIG. 7 shows, in the semiconductor device according tothe second embodiment, a gate electrode formed on a silicon substrate 2through a gate dielectric film 6 comprises a seed Si film 8, a thin SiGefilm 10 of a thickness of 50 nm or below, a thin cap Si film 12 of athickness of 0.5 nm to 5 nm, and an upper Si film 16 of a thickness of60 nm to 120 nm. The total thickness of the gate electrode is preferably80 nm to 160 nm.

Next, a method for manufacturing the semiconductor device will bedescribed.

FIG. 8 is a process sectional view for illustrating a method formanufacturing the semiconductor device according to the secondembodiment.

First, in the same manner as in the manufacturing method according tothe first embodiment, elements up to the thin cap Si film 12 are formed.

Next, as FIG. 8 shows, an upper Si film 16 is formed on the thin cap Sifilm 12 using a LPCVD method. The upper Si film 16 can be formed usingthe above-described batch-type vertical LPCVD apparatus, and the growthconditions of the upper Si film 16 are, for example, an SiH₄ flow rateof 1 slm, a growth temperature of 530° C., and a growth pressure of 100Pa.

Here, the present inventor examined the effect obtained from thestructure having the thin cap Si film 12 underneath the upper Si film16.

FIGS. 9A and 9B are SEM photographs showing the cross sections of thethin SiGe film after heat treatment corresponding to the growth of theupper Si film in the case when a thin cap Si film is formed and notformed on the thin SiGe film. Specifically, FIG. 9B is a photographshowing the state of the thin SiGe film after the heat treatmentcorresponding to the growth of the upper Si film 16 without forming athin cap Si film after forming a thin SiGe film on the gate dielectricfilm through a seed Si film; and FIG. 9B is a photograph showing thestate of the thin SiGe film after the heat treatment corresponding tothe growth of the upper Si film 16 when a thin cap Si film is formed onthe thin SiGe film after forming the thin SiGe film on the gatedielectric film through a seed Si film. The Ge content of the thin SiGefilm is 0.3 (30%), the growth temperature is 475° C., the thickness ofthe grown film is 40 nm, and the growth pressure is 200 Pa. As the heattreatment corresponding to the growth of the upper Si film 16, heattreatment is performed at a temperature of 530° C. for about 60 minutes.This heat treatment corresponds the growth of the upper Si film with athickness of 120 nm.

As FIG. 9A shows, when no thin cap Si film is formed, the filmconfiguration of the thin SiGe film, which was continuous and flatbefore heat treatment (i.e., immediately after the growth of the thinSiGe film) is significantly changed, the surface roughness is enlarged,and a discontinuous film is formed (refer to the circled portion in FIG.9A). In addition, voids are formed in the thin SiGe film after heattreatment. However, as FIG. 9B shows, when the thin cap Si film isformed, the thin SiGe film after heat treatment is maintainedcontinuous, and the flatness is also maintained. Furthermore, no voidsare formed in the thin SiGe film after heat treatment.

Therefore, the formation of the thin cap Si film 12 between the thinSiGe film 10 and the upper Si film 16 can restrict the formation ofvoids in the thin SiGe film during the formation of the upper Si film16.

The temperature for forming the upper Si film 16 is preferably higherthan the temperature for forming the underlying thin cap Si film 12 andthe thin SiGe film 10, for example, 530° C. to 620° C. Since theformation of the upper Si film 16 at such a high temperature increasesthe growth rate and improves the throughput, the productivity ofsemiconductor device is improved.

FIGS. 10A and 10B are SEM photographs showing the cross sections of athin SiGe film when the growth temperature of the upper Si film ischanged in the formation of the upper Si film on the thin SiGe filmthrough the thin cap Si film after forming the thin SiGe film on thegate dielectric film through the seed Si film. Specifically, FIG. 10A isa photograph showing the state of the laminated film when the upper Sifilm is formed under the condition of an SiH₄ flow rate of 1 slm, atemperature of 530° C., and a pressure of 100 Pa; and FIG. 10B is aphotograph showing the state of the laminated film when the upper Sifilm is formed under the condition of an SiH₄ flow rate of 0.6 slm, atemperature of 620° C., and a pressure of 20 Pa. The Ge content of thethin SiGe film is 0.3 (30%), the growth temperature is 475° C., and thethickness of the grown film is 40 nm. The growth temperature of the thincap Si film is 475° C., the same as the growth temperature of the thinSiGe film, and the thickness of the grown film is 5 nm.

As FIGS. 10A and 10B show, when the upper Si film is formed under eithercondition, no voids are formed in the thin SiGe film, and a continuousthin SiGe film can be formed.

Next, in the same manner as in the first embodiment, the upper Si film16, the thin cap Si film 12, the thin SiGe film 10, the seed Si film 8,and the gate dielectric film 6 are sequentially patterned usinglithography technique and etching technique well known in the art.Thereby, the gate electrode of the MOSFET is formed. Finally, conductiveimpurity ions are implanted using the gate electrode as the mask to formthe source-drain region 14 in the upper layer of the silicon substrate2. Performing the above-described processes attains the semiconductordevice shown in FIG. 7.

In the second embodiment, as described above, a thin SiGe film 10 isformed on a gate dielectric film 6 through a seed Si film 8 at lowgrowth temperature, and a thin cap Si film 12 of a thickness of 0.5 nmto 5 nm is continuously formed thereon at the same growth temperature.By forming the thin cap Si film 12, as in the above-described firstembodiment, a void-free high-quality thin SiGe film 10 can be formed onthe gate dielectric film 6. Thus, the uniform thin SiGe film 10 can beformed in the boundary between the gate dielectric film 6 and the gateelectrode, and a uniform Ge content in the boundary can be achieved.Therefore, the thickness, of the thin SiGe film 10 can be reduced, andhigh-performance transistors can be manufactured in highreproducibility.

In addition, as described above, since the thin SiGe film 10 is a thinfilm having a favorable film-thickness uniformity, local defectiveprocessing such as the dent of the silicon substrate 2 caused by voidsin the thin SiGe film 10 during dry etching for forming the gateelectrode can be avoided. Thereby, the process margin in the gateprocessing can be enlarged, and high-performance transistors can bestably manufactured.

Furthermore, in the second embodiment, an upper Si film 16 is formed onthe thin cap Si film 12 at a temperature higher than the growthtemperature of the thin SiGe film 10. Therefore, the throughput isincreased, and the productivity is improved, since the upper Si film 16is formed at high deposition rate with maintaining quality of the thinSiGe film 10.

Third Embodiment

FIG. 11 is a schematic cross-sectional view for illustrating asemiconductor device according to a third embodiment of the presentinvention.

The semiconductor device according to the third embodiment shown in FIG.11 differs from the above-described semiconductor device according tothe second embodiment in that sides of the gate electrode are covered bysidewalls 20, and that silicide layers 22 are formed in upper portionsof the upper Si film 16 and source-drain regions 14. Further, extensionregions 18 having an impurity concentration lower than the source-drainregions 14 in the substrate 2 below the sidewalls 20.

That is to say, the semiconductor device has the silicide layers 22formed using a well-known salicide technique in uppermost layer of thegate electrode and the source-drain regions 14. The thickness of Nibslayers serving as the silicide layers 22 is, for example, about 10 nm.

Next, a method for manufacturing the semiconductor device will bedescribed.

FIGS. 12A and 12B are process sectional views for illustrating a methodfor manufacturing the semiconductor device according to a thirdembodiment of the present invention.

First, in the same manner as in the manufacturing method according tothe second embodiment, the upper Si film 16, the thin cap Si film 12,the thin SiGe film 10, the seed Si film 8, and the gate dielectric film6 are sequentially patterned using lithography technique and etchingtechnique well known in the art. Next, as FIG. 12A shows, extensionregions 18 are formed in the upper portion of the substrate 2 by ionimplantation of impurities with a low concentration using the gateelectrode as a mask.

Next, an insulating film such as SiO₂ or Si₃N₄ is formed over the entireof the substrate 2, and the insulating film is etched using ananisotropic dry etching method. Thus, as FIG. 12B shows, sidewalls 20are formed on the sides of the gate electrode. Source-drain regions 14are formed in the upper portion of the substrates 2 by ion implantationof impurities with a high concentration using the gate electrode andsidewalls 20 as a mask.

Next, stacked layers composed of Ni film/TiN film are formed withthickness of 11 nm/10 nm over the entire of the substrate, and a heattreatment is performed. Thus, Ni film is reacted with the upper Si film16 and the source-drain regions 14, and NiSi layers 22 are formed. Here,quality of the thin SiGe film is maintained during the heat treatment bythe presence of the cap Si film 12. The semiconductor device shown inFIG. 11 is attained by getting rid of the Ni film/TiN film which has notreacted using chemical solution.

In the third embodiment, as described above, the NiSi layers 22 areformed in upper portions of the upper Si film 16 and source-drainregions 14 using salicide technique. The quality of the thin SiGe film10 can be maintained even if the heat treatment for forming the NiSilayers 22 is done in addition to the effects attained in the secondembodiment.

Fourth Embodiment

FIG. 13 is a schematic cross-sectional view for illustrating asemiconductor device according to a fourth embodiment of the presentinvention.

The semiconductor device according to the fourth embodiment shown inFIG. 13 differs from the above-described semiconductor device accordingto the first embodiment in that thin SiGe film 10 made by stacking aplurality of SiGe layers 10 a and 10 b. This difference will bedescribed as follows.

In the fourth embodiment, on the seed Si film 8 is formed the thin SiGefilm 10 by stacking a first SiGe layer 10 a and a second SiGe layer 10b. The first and second SiGe layers 10 a and 10 b differ in Ge content Xof formula Si_((1−x))Ge_(x) representing the first and second SiGelayers 10 a and 10 b respectively. The first and second SiGe layers 10 aand 10 b are continuously formed at the same growth temperature. Here,each Ge content X of the SiGe layers 10 a and 10 b is 0.15 or more andsmaller than 0.4. The film thickness of the first SiGe layer 10 a maydiffer from the film thickness if the second SiGe layer 10 b. Totalthickness of the SiGe layers 10 a and 10 b is preferably 50 nm or below.

On the second SiGe layer 10 b is formed the thin cap Si film 12 of thethickness of 0.5 nm to 5 nm. The first and second SiGe layer 10 a and 10b and the thin cap Si film 12 are continuously formed at the sametemperature.

Next, a method for manufacturing the semiconductor device will bedescribed.

FIGS. 14A and 14B are process sectional views for illustrating a methodfor manufacturing the semiconductor device according to the fourthembodiment.

First, in the same manner as in the manufacturing method according tothe first embodiment, the gate dielectric film 6 is formed on thesubstrate 2, and the seed Si film 8 is formed on the gate dielectricfilm 6.

Next, the first SiGe layer 10 a is formed on the seed Si film 8, thesecond SiGe layer 10 b is formed on the first SiGe layer 10 a, and thethin cap Si film 12 is formed on the second SiGe layer 10 b. Thereby,the structure shown in FIG. 14A is attained. Here, the first SiGe layer10 a, the second SiGe layer 10 b and the thin cap Si film 12 arecontinuously formed at the same temperature. The forming temperature ispreferably 450° C. or above and 494° C. or below, and most preferably475° C. The first and second SiGe layers having different Ge content areformed by changing the flow-rate ratio of H₂-diluted 10% GeH₄ to SiH₄.

Next, as FIG. 14B shows, the thin cap Si film 12, the second SiGe layer10 b, the first SiGe layer 10 a, the seed Si film 8, and the gatedielectric film 6 are sequentially patterned using lithography techniqueand etching technique well known in the art. Thereby, the gate electrodeof the MOSFET is formed.

Finally, conductive impurity ions are implanted using the gate electrodeas the mask to form the source-drain region 14 in the upper layer of thesilicon substrate 2. Performing the above-described processes attainsthe semiconductor device shown in FIG. 13.

Therefore, according to the fourth embodiment, the equivalent effects asthe effects obtained in the first embodiment can be obtained.

In the fourth embodiment, although the thin SiGe film 10 is formed bytwo SiGe layers 10 a and 10 b, the thin SiGe film 10 may be formed bystacking three or more SiGe layers.

Although the thin SiGe film 10 is formed by the SiGe layers havingdifferent Ge content, the thin SiGe film 10 may be formed by stacking anamorphous SiGe layer and a polycrystalline SiGe layer. In this case, theamorphous SiGe layer can be grown under a growth pressure 150 Pa, andthe polycrystalline SiGe layer can be grown under a growth pressure of30 Pa.

Further, an upper Si may be formed on thin cap Si film 12 using the samemanner as in the manufacturing method according to the second embodiment(The same applies to second to fifth embodiments described later.).

Fifth Embodiment

FIG. 15 is a schematic cross-sectional view for illustrating asemiconductor device according to a fifth embodiment of the presentinvention.

In the semiconductor device shown in FIG. 15, the gate electrodecomprises a plurality of SiGe layers 10 a and 10 b and a plurality ofthin cap Si films 12 a and 12 b. The SiGe layers and the thin cap filmsare stacked alternately. The difference between the fifth embodiment andthe first embodiment will be described as follows.

In the fifth embodiment, on the seed Si film 8 is formed a first SiGelayer 10 a, and a first thin cap Si film 12 a is formed on the firstSiGe layer 10 a. On the first thin cap Si film 12 a is formed a secondSiGe layer 10 b, and a second thin cap Si film 12 b is formed on thesecond SiGe layer 10 b. Here, each Ge content X of the SiGe layers 10 aand 10 b is 0.15 or more and smaller than 0.4. The film thickness of thefirst SiGe layer 10 a may differ from the film thickness if the secondSiGe layer 10 b. Total thickness of the SiGe layers 10 a and 10 b ispreferably 50 nm or below. The each film thickness of the first andsecond thin cap Si films 12 a and 12 b is preferably 0.5 nm to 5 nm.

Next, a method for manufacturing the semiconductor device will bedescribed.

FIGS. 16A and 16B are process sectional views for illustrating a methodfor manufacturing the semiconductor device according to the fifthembodiment.

First, in the same manner as in the manufacturing method according tothe first embodiment, the gate dielectric film 6 is formed on thesubstrate 2, and the seed Si film 8 is formed on the gate dielectricfilm 6.

Next, the first SiGe layer 10 a is formed on the seed Si film 8, and thefirst thin cap Si film 12 a is formed on the first SiGe layer. 10 a. Thesecond SiGe layer 10 b is formed on the first thin cap Si film 12 a, andthe second thin cap Si film 12 b is formed on the second SiGe layer 10b. Thereby, the structure shown in FIG. 16A is attained. Here, the firstSiGe layer 10 a, the first thin cap Si film 12 a, the second SiGe layer10 b and the second thin cap Si film 12 b are continuously formed at thesame temperature. The forming temperature is preferably 450° C. or aboveand 494° C. or below, and most preferably 475° C.

Next, as FIG. 16B shows, the second thin cap Si film 12 b, the secondSiGe layer 10 b, the first thin cap Si film 12 a, the first SiGe layer10 a, the seed Si film 8, and the gate dielectric film 6 aresequentially patterned using lithography technique and etching techniquewell known in the art. Thereby, the gate electrode of the MOSFET isformed.

Finally, conductive impurity ions are implanted using the gate electrodeas the mask to form the source-drain region 14 in the upper layer of thesilicon substrate 2. Performing the above-described processes attainsthe semiconductor device shown in FIG. 15.

Therefore, according to the fifth embodiment, the equivalent effects asthe effects obtained in the first embodiment can be obtained.

In the fourth embodiment, the first and second SiGe layers 10 a and 10 bmay be formed under the same growth condition, and may be formed underthe different growth conditions as described in the fourth embodiment.

Sixth Embodiment

A sixth embodiment is attained by applying the fourth embodiment to thethird embodiment.

FIG. 17 is a schematic cross-sectional view for illustrating asemiconductor device according to a sixth embodiment of the presentinvention.

In the sixth embodiment, on the seed Si film 8 is formed the thin SiGefilm 10 by stacking a first SiGe layer 10 a and a second SiGe layer 10b. The first and second SiGe layers 10 a and 10 b differ in Ge content Xof formula Si_((1−x))Ge_(x) representing the first and second SiGelayers 10 a and 10 b respectively. The first and second SiGe layers 10 aand 10 b are continuously formed at the same growth temperature. Here,each Ge content X of the SiGe layers 10 a and 10 b is 0.15 or more andsmaller than 0.4. The film thickness of the first SiGe layer 10 a maydiffer from the film thickness if the second SiGe layer 10 b. Totalthickness of the SiGe layers 10 a and 10 b is preferably 50 nm or below.

On the second SiGe layer 10 b is formed the thin cap Si film 12 of thethickness of 0.5 nm to 5 nm. The first and second SiGe layer 10 a and 10b and the thin cap Si film 12 are continuously formed at the sametemperature. The upper Si film 16 of the thickness of 60 nm to 120 nm isformed on the thin cap Si film 12.

Sides of the gate electrode a recovered by sidewalls 20. Extensionregions 18 having an impurity concentration lower than the source-drainregions 14 in the substrate 2 below the sidewalls 20. NiSi layers 22 areformed as silicide layers in upper portions of the upper Si film 16 andsource-drain regions 14.

Next, a method for manufacturing the semiconductor device will bedescribed.

First, in the same manner as in the manufacturing method according tothe first embodiment, the gate dielectric film 6 is formed on thesubstrate 2, and the seed Si film 8 is formed on the gate dielectricfilm 6.

Next, in the same manner as in the manufacturing method according to thefourth embodiment, the first SiGe layer 10 a, the second SiGe layer 10 band the thin cap Si film 12 are continuously formed on the seed Si film8 at the same temperature.

Next, in the same manner as in the manufacturing method according to thesecond embodiment, the upper Si film 16 is formed on the thin cap Sifilm 12 at a temperature higher than the growth temperature of the firstSiGe layer 10 a.

The upper Si film 16, thin cap Si film 12, the second SiGe layer 10 b,the first SiGe layer 10 a, the seed Si film 8, and the gate dielectricfilm 6 are sequentially patterned using lithography technique andetching technique well known in the art. Thereby, the gate electrode ofthe MOSFET is formed. Extension regions 18 are formed in the upperportion of the substrate 2 by ion implantation of impurities with a lowconcentration using the gate electrode as a mask sidewalls 20 are formedon the sides of the gate electrode. Source-drain regions 14 are formedin the upper portion of the substrate 2 by ion implantation ofimpurities with a high concentration using the gate electrode andsidewalls 20 as a mask. Further, NiSi layers 22 are formed in upperportions of the upper Si film 16 and source-drain regions 14 usingsalicide technique. Performing the above-described processes attains thesemiconductor device shown in FIG. 17.

Therefore, according to the sixth embodiment, the equivalent effects asthe effects obtained in the first, second and third embodiments can beobtained.

Seventh Embodiment

A seventh embodiment is attained by applying the fifth embodiment to thethird embodiment.

FIG. 18 is a schematic cross-sectional view for illustrating asemiconductor device according to a seventh embodiment of the presentinvention.

In the seventh embodiment, on the seed Si film 8 is formed a first SiGelayer 10 a, and a first thin cap Si film 12 a is formed on the firstSiGe layer 10 a. On the first thin cap Si film 12 a is formed a secondSiGe layer 10 b, and a second thin cap Si film 12 b is formed on thesecond SiGe layer 10 b. Here, each Ge content X of the SiGe layers 10 aand 10 b is 0.15 or more and smaller than 0.4. The film thickness of thefirst SiGe layer 10 a may differ from the film thickness if the secondSiGe layer 10 b. Total thickness of the SiGe layers 10 a and 10 b ispreferably 50 nm or below. The each film thickness of the first andsecond thin cap Si films 12 a. and 12 b is preferably 0.5 nm to 5 nm.

The upper Si film 16 of the thickness of 60 nm to 120 nm is formed onthe thin cap Si film 12.

Sides of the gate electrode are covered by sidewalls 20. Extensionregions 18 having an impurity concentration lower than the source-drainregions 14 in the substrate 2 below the sidewalls 20. NiSi layers 22 areformed as silicide layers in upper portions of the upper Si film 16 andsource-drain regions 14.

Next, a method for manufacturing the semiconductor device will bedescribed.

First, in the same manner as in the manufacturing method according tothe first embodiment, the gate dielectric film 6 is formed on thesubstrate 2, and the-seed Si film 8 is formed on the gate dielectricfilm 6.

Next, in the same manner as in the manufacturing method according to thefifth embodiment, the first SiGe layer 10 a, the first thin cap. Si film12 a, the second SiGe layer 10 b and the second thin cap Si film 12 bare continuously formed on the seed Si film 8 at the same temperature.

Next, in the same manner as in the manufacturing method according to thesecond embodiment, the upper Si film 16 is formed on the second thin capSi film 12 b at a temperature higher than the growth temperature of thefirst SiGe layer 10 a.

The upper Si film 16, the second thin cap Si film 12 b, the second SiGelayer 10 b, the first thin cap Si film 12 a, the first SiGe layer 10 a,the seed Si film 8, and the gate dielectric film 6 are sequentiallypatterned using lithography technique and etching technique well knownin the art. Thereby, the gate electrode of the MOSFET is formed.Extension regions 18 are formed in the upper portion of the substrate 2by ion implantation of impurities with a low concentration using thegate electrode as a mask sidewalls 20 are formed on the sides of thegate electrode. Source-drain regions 14 are formed in the upper portionof the substrate 2 by ion implantation of impurities with a highconcentration using the gate electrode and sidewalls 20 as a mask.Further, NiSi layers 22 are formed in upper portions of the upper Sifilm 16 and source-drain regions.14 using salicide technique. Performingthe above-described processes attains the semiconductor device shown inFIG. 18.

Therefore, according to the seventh embodiment, the equivalent effectsas the effects obtained in the first, second and third embodiments canbe obtained.

This invention, when practiced illustratively in the manner describedabove, provides the following major effects:

According to the present invention, a high-quality thin SiGe film freeof voids can be formed on a gate-dielectric film.

Further, the present invention is not limited to these embodiments, butvariations and modifications may be made without departing from thescope of the present invention.

The entire disclosure of Japanese Patent Application No. 2003-129986filed on May 8, 2003 containing specification, claims, drawings andsummary are incorporated herein by reference in its entirety.

1. A method for manufacturing a semiconductor device comprising: forminga gate dielectric film on a substrate; forming a seed Si film on thegate dielectric film; forming a SiGe film on the seed Si film at atemperature between 450° C. and 494° C., and continuously forming a capSi film with a thickness of 0.5 nm to 5 nm on the SiGe film at the sametemperature at which the SiGe film is formed; forming an upper Si filmon the cap Si film at a temperature higher than the temperature offorming the SiGe film; patterning the upper Si film, the cap Si film,the SiGe film, and the seed Si film to form a gate electrode; andforming source-drain regions in the substrate by ion implantation usingthe gate electrode as a mask.
 2. The method for manufacturing asemiconductor device according to claim 1, including forming the upperSi film at a temperature between 530° C. and 620° C.
 3. The method formanufacturing a semiconductor device according to claim 1, whereinsurface energy of the thin SiGe film is lowered by forming the thin capSi film.
 4. The method for manufacturing a semiconductor deviceaccording to claim 1, including forming the SiGe film at a pressurelower than 30 Pa, or 150 Pa or higher.
 5. The method for manufacturing asemiconductor device according to claim 1, wherein forming the SiGe filmcomprises: forming a first SiGe layer on the seed Si film; and forming asecond SiGe layer on the first SiGe layer, the second SiGe layer beingdifferent in composition from the first SiGe layer.
 6. The method formanufacturing a semiconductor device according to claim 5, wherein theproportion of Ge content of each of the first and second SiGe layers isdifferent.